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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/3 HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching applications. Features * High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-126 Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................................ +150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 20 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 600 V BVCEO Collector to Emitter Voltage .............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 6 V IC Collector Current (DC)............................................................................................................ 800 mA IC Collector Current (Pulse)...................................................................................................... 1600 mA IB Base Current (DC).................................................................................................................. 100 mA IB Base Current (Pulse) .............................................................................................................. 200 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 tf Min. 600 400 6 10 10 Typ. Max. 10 10 10 400 800 1 40 0.6 Unit V V V uA uA uA mV mV V Test Conditions IC=100uA IC=10mA IE=10uA VCB=600V VCE=400V VEB=6V IC=100mA, IB=20mA IC=300mA, IB=60mA IC=100mA, IB=20mA VCE=10V, IC=0.1A VCE=10V, IC=0.5A VCC=100V, IC=0.3A,IB1=-IB2=0.06A *Pulse Test: Pulse Width 380us, Duty Cycle2% uS Classification of hFE1 Rank Range HLB122T B1 10-17 B2 13-22 B3 18-27 B4 23-32 B5 28-37 B6 33-40 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 10000 Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 2/3 Saturation Voltage & Collector Current 125 C o 75 C o Saturation Voltage (mV) 1000 75 C 125 C o o o 25 C o hFE 10 100 25 C hFE @ VCE=10V 10 VCE(sat) @ IC=5IB 1 1 10 100 1000 1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=5IB 100 Capacitance & Reverse-Biased Voltage Saturation Voltage (mV) 75 C 1000 25 C o o Capacitance (pF) 10 Cob 125 C o 100 1 10 100 1000 1 0.1 1 10 100 Collector Current-IC (mA) Reverse-Biased Voltage (V) Safe Operatig Area 10 PT=1ms Collector Current-IC (A) 1 PT=400ms 0.1 PT=100ms 0.01 1 10 100 Forward-VCE (V) 1000 HLB122T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126 Dimension D A B 123 G C I E J K M Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 3/3 Marking: 3 Date Code H LB 122T Control Code 4 Style: Pin 1.Emitter 2.Collector 3.Base F H L 1 2 3-Lead TO-126 Plastic Package HSMC Package Code: T *: Typical DIM 1 2 3 4 A B C D E Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB122T HSMC Product Specification |
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